The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.
The MS2422 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance.
Full PDF Text Transcription for MS2422 (Reference)
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MS2422. For precise diagrams, and layout, please refer to the original PDF.
F & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features www.DataSheet4U.com • DESIGNED • • • • • • • • • • FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030 – 1090 MHz 300 W (min.) DME 1025 – 1150 MHz 290 W (typ.) TACAN 960 – 1215 MHz 960 – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE DESCRIPTION: The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN.
MS2422 Datasheet
