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MS1262 - RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS

General Description

The MS1262 is a NPN silicon RF power transistor designed for 12.5 volt UHF amplifier applications operating to 512 MHz.

The MS1262 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance.

Key Features

  • 512 MHz 12.5 VOLTS POUT = 15 W.

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Datasheet Details

Part number MS1262
Manufacturer Advanced Power Technology
File Size 108.08 KB
Description RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS
Datasheet download datasheet MS1262 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1262 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS ` Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1262 is a NPN silicon RF power transistor designed for 12.5 volt UHF amplifier applications operating to 512 MHz. The MS1262 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. www.DataSheet4U.