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BFR96G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Download the BFR96G datasheet PDF. This datasheet also covers the BFR96 variant, as both devices belong to the same rf & microwave discrete low power transistors family and are provided as variant models within a single manufacturer datasheet.

Description

Designed primarily for use in high-gain, low noise, small-signal amplifiers.

applications requiring fast switching times.

Features

  • High Current-Gain.
  • Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA Low Noise Figure.
  • NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain.
  • Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T (STYLE #2).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BFR96_AdvancedPowerTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BFR96G
Manufacturer Advanced Power Technology
File Size 153.83 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet BFR96G Datasheet

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Other Datasheets by Advanced Power Technology

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BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Full PDF Text Transcription

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.
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