Datasheet4U Logo Datasheet4U.com

AP85L02H-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

AP88LS02 used advanced design and process to achieve low gate charge ,lower on-resistance and fast switching performance.

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP85N04NF 40V N-Channel Enhancement Mode MOSFET APM
AP85N06D 60V N-Channel Enhancement Mode MOSFET APM
AP8003 Fixed 5V Output Non-Isolated AC-DC Conversion Chipown
AP8007 AC-DC PWM CONTROLLER AiT Semiconductor
AP8010 AC-DC PWM CONTROLLER AiT Semiconductor

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP85L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85L02J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85L02J-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T03GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T03GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power Electronics Corp. AP85L02H/J-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching D G S Description AP88LS02 used advanced design and process to achieve low gate charge ,lower on-resistance and fast switching performance. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J-A) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.