AP4575GH-HF
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G1 G2
S1
60V 36mΩ 6.6A -60V 75mΩ -4.7A
D2
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current3 Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
60 -60 +20 +20 6.6 -4.7 5.3 -3.8 20 -20
3.13 -55 to 150 -55 to 150
V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 6 40
Unit ℃/W ℃/W
1 201501162
N-CH Electrical Characteristics@...
