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AP4501GD - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501GM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501AGEM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501AGEY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501AGM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501AGM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501M N AND P-CHANNEL ENHANCEMENT
AP4501SD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4501SM POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AP4501GD Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package ▼ RoHS Compliant PDIP-8 S1 S2 G1 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 30V 28mΩ 7A -30V 5 0m Ω -5.3A G2 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Rating N-channel 30 ±20 7 5.8 20 2 0.