AP3N020P
Description
AP436N00420sesreierisesaarerefrforomm AAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all mercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON) ID
30V 20mΩ 23.3A
TO-220(P)
Absolute
Symbol
Maximum
Rating Psa@ram Tej=te2r 5o C. (unless otherwise specified)
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
30 V +20 V 23.3 A 14.7 A 80 A 17.8 W
PD@TA=25℃ EAS TSTG
Total Power Dissipation Single Pulse Avalanche Energy3
Storage Temperature Range
2 3.2 -55 to 150
W m J...
