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Advanced Power Electronics Corp.
AP2605GY-HF-3
P-channel Enhancement-mode Power MOSFET
Fast Switching Characteristics Low Gate Charge Small Footprint, Low Profile RoHS-compliant, halogen-free
D
BV DSS R DS(ON) ID
-30V 80mΩ -4A
G S
Description
S
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D D G D
The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.
SOT-26
D
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating -30 ±20 -4 -3.3 -20 2 0.