AP15N03GI
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for mercial-industrial through hole applications.
BVDSS RDS(ON) ID
30V 80mΩ
15A
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ
Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating 30 +20 15 9 50 20.8
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 6.0 65
Unit ℃/W ℃/W
1 200904141
Electrical Characteristics@...
