AP1333U - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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AP1333U p-channel enhancement mode power mosfet by Advanced Power Electronics Corp - Datasheet Preview

Datasheet Details

Part number	AP1333U
Manufacturer	Advanced Power Electronics Corp
File Size	126.52 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP1333U Datasheet

Other Datasheets by Advanced Power Electronics Corp

Part Number	Description
AP1333GU	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP1333GU-HF	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP1333GU-HF-3	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP1332EU	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP1332GEU	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP1332GEU-HF	N-channel Enhancement mode Power MOSFET
AP1332GEU-HF-3	N-channel Enhancement mode Power MOSFET
AP13N50I	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP13N50I-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP13N50I-HF-3	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP1333U Advanced Power Electronics Corp. ▼ Simple Gate Drive ▼ Small Package Outline ▼ Fast Switching Speed D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S -20V 800mΩ -550mA SOT-323 G Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating -20 ± 12 -550 -440 2.5 0.35 0.