AP10N70I-A-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for mercialindustrial through hole applications.
TO-220CFM(I)
Absolute Maximum Ratings
.Data Sheet.co.kr
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
Rating 650 ± 30 10 6.8 40 31.3
Units V V A A A W m J ℃ ℃
Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
50 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201204201
Datasheet pdf
- http://..net/
Data & specifications subject to change...
