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4511GD - AP4511GD

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
4511GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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AP4511GD RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed www.DataSheet4U.com D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 35V 25mΩ 7A -35V 40mΩ -6.1A ▼ PDIP-8 Package PDIP-8 S1 S2 G1 P-CH BVDSS RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 7 5.7 30 2.0 0.
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