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RM24C256DS - 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus

Description

The Adesto® RM24C256DS is a 256Kbit, serial EEPROM memory device that utilizes Adesto's CBRAM® resistive technology.

The memory devices use a single lowvoltage supply ranging from 1.65V to 3.6V.

085B 11/2016 The Adesto® I2C device is accessed through a 2-wire I2C com

Features

  • Advance Datasheet.
  • Memory array: 256Kbit non-volatile serial EEPROM memory.
  • Single supply voltage: 1.65V - 3.6V.
  • 2-wire I2C interface.
  • Compatible with I2C bus modes: -100kHz -400kHz -1MHz.
  • Page size: 64 bytes -Byte and Page Write from 1 to 64 bytes.
  • 128-byte, One-Time Programmable (OTP) Security Register - 64 bytes factory programmed with a unique identifier - 64 bytes user programmable.
  • Low Energy Byte Write -Byte Write consuming 50 nJ.
  • Low power.

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Datasheet preview – RM24C256DS

Datasheet Details

Part number RM24C256DS
Manufacturer Adesto
File Size 1.29 MB
Description 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus
Datasheet download datasheet RM24C256DS Datasheet
Additional preview pages of the RM24C256DS datasheet.

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Full PDF Text Transcription

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RM24C256DS 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus  Features Advance Datasheet  Memory array: 256Kbit non-volatile serial EEPROM memory  Single supply voltage: 1.65V - 3.6V  2-wire I2C interface  Compatible with I2C bus modes: -100kHz -400kHz -1MHz  Page size: 64 bytes -Byte and Page Write from 1 to 64 bytes  128-byte, One-Time Programmable (OTP) Security Register - 64 bytes factory programmed with a unique identifier - 64 bytes user programmable  Low Energy Byte Write -Byte Write consuming 50 nJ  Low power consumption -0.25 mA active Read current -1.0 mA active Write current -1.0 µA Standby current  Fast Write -Page Write in 1.
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