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HSMS-282N - Surface Mount RF Schottky Barrier Diodes

Download the HSMS-282N datasheet PDF (HSMS-2820 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for surface mount rf schottky barrier diodes.

Description

These Schottky diodes are specifically designed for both analog and digital applications.

This series offers a wide range of specifica­tions and package con­figura­tions to give the d­ esigner wide flexib­ ility.

Features

  • Low Turn-On Voltage (As Low as 0.34 V at 1 mA).
  • Low FIT (Failure in Time) Rate.
  • Six-sigma Quality Level.
  • Single, Dual and Quad Versions.
  • Unique Configurations in Surface Mount SOT-363 Package.
  • increase flexibility.
  • save board space.
  • reduce cost.
  • HSMS-282K Grounded Center Leads Provide up to 10 dB Higher Isolation.
  • Matched Diodes for Consistent Performance.
  • Better Thermal Conduct.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSMS-2820-AVAGO.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSMS-282N
Manufacturer AVAGO
File Size 326.48 KB
Description Surface Mount RF Schottky Barrier Diodes
Datasheet download datasheet HSMS-282N Datasheet
Other Datasheets by AVAGO

Full PDF Text Transcription

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HSMS-282x Surface Mount RF Schottky ­Barrier Diodes Data Sheet Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to give the d­ esigner wide flexib­ ility. Typical applications of these Schottky diodes are mixing, detecting, switching, sampling, clamping, and wave shaping. The HSMS‑282x series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.
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