Click to expand full text
SUN12A60F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=0.55Ω (Typ.) Low gate charge: Qg=38nC (Typ.) Low reverse transfer capacitance: Crss=15pF (Typ.) Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
GDS
TO-220F-3L
SUN12A60F
SUN12A60
TO-220F-3L
Marking Information
AAUUKK ◎S△UYNΔM12YDADM6□D0D
SDB20D45
Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD□
-. ◎: Option Code
-. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -.