Datasheet4U Logo Datasheet4U.com

SUM202MN - P-Channel MOSFET + PNP BJT

Datasheet Summary

Features

  • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor).
  • Higher Efficiency Extending Battery Life.
  • Logic Level Gate Drive (MOSFET).
  • Performance DFN Package BVDSS -20V BVCEO MOSFET RDS(ON) Typ. 48mΩ @ VGS=-4.5V 65mΩ @ VGS=-2.5V PNP BJT BVEBO.
  • This is a Halogen.
  • Free Device -12V -5V ID Max -5.3A IC Max -5A.

📥 Download Datasheet

Datasheet preview – SUM202MN

Datasheet Details

Part number SUM202MN
Manufacturer AUK
File Size 346.59 KB
Description P-Channel MOSFET + PNP BJT
Datasheet download datasheet SUM202MN Datasheet
Additional preview pages of the SUM202MN datasheet.

📁 Similar Datasheet

  • SUM2017 - Blanking Precision 16 Channel Constant Current LED Driver IC (Sumacro)
  • SUM2017T - Dimming Blind 16-Bit Constant Current Driver (Sumacro)
  • SUM2018 - 16 Channel Constant Current LED Driver IC (Sumacro)
  • SUM2019GAS2 - 16-Channel Constant Current LED Driver IC (Sumacro)
  • SUM2030GAS2 - 16-bit constant current driver (Sumacro)
  • SUM2031 - 16-bit constant current driver (Sumacro)
  • SUM2032GAS2 - 32-bit constant current driver (Sumacro)
  • SUM20F - (SUM20F - SUM50F) HIGH VOLTAGE RECTIFIER (SSDI)
  • SUM20FSMS - (SUM20FSMS - SUM50FSMS) HIGH VOLTAGE RECTIFIER (SSDI)
  • SUM20K8NE-C - Dual-N Enhancement Mode Power MOSFET (SeCoS)
Other Datasheets by AUK

Full PDF Text Transcription

Click to expand full text
SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated 1 product provides higher efficiency and accuracy for battery powered portable electronics. Features • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package BVDSS -20V BVCEO MOSFET RDS(ON) Typ. 48mΩ @ VGS=-4.5V 65mΩ @ VGS=-2.5V PNP BJT BVEBO. • This is a Halogen−Free Device -12V -5V ID Max -5.
Published: |