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SUM201MN - P-Channel MOSFET + PNP BJT

Datasheet Summary

Features

  • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor).
  • Higher Efficiency Extending Battery Life.
  • Logic Level Gate Drive (MOSFET).
  • Performance DFN Package BVDSS -20V BVCEO MOSFET RDS(ON) Typ. 48mΩ @ VGS=-4.5V 65mΩ @ VGS=-2.5V PNP BJT BVEBO.
  • This is a Halogen.
  • Free Device -20V -5V ID Max -5.3A IC Max -5A.

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Datasheet Details

Part number SUM201MN
Manufacturer AUK
File Size 423.70 KB
Description P-Channel MOSFET + PNP BJT
Datasheet download datasheet SUM201MN Datasheet
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Full PDF Text Transcription

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SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. Features • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package BVDSS -20V BVCEO MOSFET RDS(ON) Typ. 48mΩ @ VGS=-4.5V 65mΩ @ VGS=-2.5V PNP BJT BVEBO. • This is a Halogen−Free Device -20V -5V ID Max -5.3A IC Max -5A Applications • Power Management in Portable and Battery−Powered Products; i.e.
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