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SMNY2Z30 - Advanced N-Ch Power MOSFET

Features

  • High voltage: BVDDS=300V (Min. ).
  • Low gate charge: Qg=2.9nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=8Ω (Max. ).
  • Built-in protection zener diode.
  • RoHS compliant device Ordering Information Part Number Marking Package SMNY2Z30 SMNY2Z30 TO-92 GDS TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (Ta=25C unless otherwise noted) Characteristic.

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Datasheet Details

Part number SMNY2Z30
Manufacturer AUK
File Size 347.04 KB
Description Advanced N-Ch Power MOSFET
Datasheet download datasheet SMNY2Z30 Datasheet

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Full PDF Text Transcription

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SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  High voltage: BVDDS=300V (Min.)  Low gate charge: Qg=2.9nC (Typ.)  Low drain-source On resistance: RDS(on)=8Ω (Max.)  Built-in protection zener diode  RoHS compliant device Ordering Information Part Number Marking Package SMNY2Z30 SMNY2Z30 TO-92 GDS TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -.
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