The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Semiconductor
SDV251S
Variable Capacitance Diode
Features
• High capacitance ratio in low voltage • Low series resistance (rS=0.6Ω Max.)
Application
• AFC, VCO application
Ordering Information
Type No. SDV251S Marking V7 Package Code SOT-23
Outline Dimensions
2.4±0.1 1.30±0.1
unit : mm
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
2.9±0.1
3
1
0.2 Min.
2
1.12 Max.
KSD-2094-001
0.124
PIN Connections 1. Anode 2. NC 3. Cathode
0.38
0~0.1
-0.03 +0.05
1
SDV251S
Absolute maximum ratings
Characteristic
Reverse voltage Junction temperature Storage temperature
Ta=25°C
Symbol
VR Tj Tstg
Ratings
12 150 -55 ~ 150
Unit
V °C °C
Electrical Characteristics
Characteristic
Reverse Voltage Reverse Current Diode Capacitance Capacitance Ratio Series resistance
Ta=25°C
Symbol
VR IR C1.6V C5.