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Features
• Fast Read Access Time – 70 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • Low Power Dissipation – 80 mA Active Current – 3 mA Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Full Military and Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option
256K (32K x 8) High-speed Parallel EEPROM
AT28HC256
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