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AT28C040 Datasheet 4-Megabit (512K x 8) Paged Parallel EEPROM

Manufacturer: Atmel (now Microchip Technology)

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General Description

The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM).

Its 4 megabits of memory is organized as 524,288 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 mW.

Key Features

  • Read Access Time.
  • 200 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 256 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 256 Byte Page Write Operation.
  • Low Power Dissipation.
  • 50 mA Active Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.
  • High Reliability CMO.

More Datasheets from Atmel (now Microchip Technology)

Part Number Description
AT28C010 1-Megabit (128K x 8) Paged Parallel Military EEPROM
AT28C16 16K 2K x 8 CMOS E2PROM
AT28C17 16K 2K x 8 CMOS E2PROM
AT28C256 256K (32K x 8) Paged Parallel EEPROM
AT28C64 64K (8K x 8) Parallel EEPROMs
AT28C64B 64K (8K x 8) Parallel EEPROM
AT28C64E 64K (8K x 8) Parallel EEPROMs
AT28C64X 64K (8K x 8) Parallel EEPROMs
AT28BV16 16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV256 256K (32K x 8) Battery-Voltage Parallel EEPROMs