AT11030U
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- Green Device Available
110V N-Channel MOSFET
Product Summary
VDS ID RDS(ON) (at VGS=10V)
230 mΩ
Applications
- High Frequency Point-of-Load,Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
SOT23-6L Top View
Absolute Maximum Ratings(TA=25℃, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Symbol VDS VGS ID IDM PD TSTG TJ
Thermal Characteristics
Parameter Thermal Resistance Junction-Ambient1
Symbol RθJA
Rating 110 ±20 3 10 1.25
-55 to 150 -55 to 150
Units V V A A W ℃ ℃
Typ
Max
Unit
---
℃/W
ATC Semiconductor Corp
1 v2.0
.atcsemi.
110V N-Channel MOSFET
Electrical Characteristics (TJ=25℃, unless otherwise...
