ASR50N1200D88
Description
Silicon Carbide (Si C) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Simple to drive with Standard Gate Drive
- 100% avalanche tested
- Maximum junction temperature of 150°C
- ROHS pliant
Application
- EV Charging
- DC-AC Inverters
- High Voltage DC/DC Converters
- Switch Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
Ordering Information
Part Number ASR50N1200D88
Marking ASR50N1200D88
Package DFN8- 8
Packaging Tube
Absolute Maximum Ratings(Tc=25℃) Symbol Parameter
Value
Unit
Drain-Source Voltage
Drain...
