ASG304
Features
Description
DC-2000 MHz Si Ge HBT Amplifier
- Si Ge Technology
- 18 d B Gain at 900 MHz
- +24 d Bm P1d B
- +41 d Bm Output IP3
- 2.6 d B Noise Figure
- MTTF > 100 Years
- Single +6 V Supply
- SOT-89 Surface Mount Package
The ASG304 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telemunication systems. The product is manufactured using a state-of-the-art Si Ge HBT process of the pany's own, making it cost-effective and highly reliable. The amplifiers are available in a low cost SOT-89 package pleting stringent DC and RF tests.
Specifications 1)
Parameters
Units
Min.
Typ.
Max.
Frequency Range
MHz
- 2000
Gain Input VSWR 2) Output VSWR 2) Output IP3 3) d B d Bm
17.5 39
18 1.2 1.7 41
Noise Figure d B
Output P1d B d Bm
Supply Current m A
Supply Voltage Thermal Resistance, Rth 4)
V °C/W
6 32
1) Measurement conditions are as...
