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AP6G06S - 60V N+P-Channel Enhancement Mode MOSFET

General Description

The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V（Type：40mΩ） VDS = -60V ID =-6.2A RDS(ON) < 90mΩ @ VGS=-10V（Type：70mΩ）.

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Datasheet Details

Part number AP6G06S
Manufacturer APM
File Size 1.13 MB
Description 60V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP6G06S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP6G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP6G06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =6.5A RDS(ON) < 55mΩ @ VGS=10V（Type：40mΩ） VDS = -60V ID =-6.