AP5N50BD
Description
The AP5N50BD is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features
VDS = 500V ID =5A
Only
RDS(ON) < 3.0Ω @ VGS=10V （Type：2.4Ω） Application
Use
Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) times g Package Marking and Ordering Information n Product ID
Pack
Marking he AP5N50BD
TO-252-3L
AP5N50BD XXX YYYY gs Absolute Maximum Ratings (TC=25℃unless otherwise noted) n Symbol
Parameter
Value
To VDSS
Drain-Source Voltage (VGS = 0V)
ID r IDM Fo VGS
Continuous Drain Current Pulsed Drain Current (note1)
Gate-Source Voltage
5 15 ±30
Single Pulse Avalanche Energy (note2)
Avalanche Current (note1)
Repetitive Avalanche Energy note1)
Power...
