AP50H02DF3
Description
20V N+N-Channel Enhancement Mode MOSFET
The AP50H02DF3 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 20V ID =50A
RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ）
Application
3.3V MCU Drive
Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
DFN3- 3-8L
Marking AP50H02DF XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
VDSS VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2
Power Dissipation Operating and Storage Temperature Range Thermal Resistance Junction-Ambient 1
Thermal...
