AP15N10D
Description
AP15N10BD
100V N-Channel Enhancement Mode MOSFET
The AP15N10BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 100V ID =15A
RDS(ON) < 100mΩ@ VGS=10V （Type：85mΩ）
Application
Automative lighting Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
TO-252-3L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM PD@TC=25℃
TSTG TJ
RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Thermal Resistance, Junctionambient Maximum Thermal Resistance, Junction-case
Marking
Qty(PCS)
AP15N10D-L XXX...
