AP15N06SI
Description
65V N-Channel Enhancement Mode MOSFET
The AP15N06SI uses advanced APM-SGTⅠⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 65V ID =15A
RDS(ON) < 18mΩ @ VGS=10V (Type：13mΩ)
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
SOT89-3L
Marking AP15N06SI XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current1,6
ID@TC=100℃
Continuous Drain Current1,6
Pulsed Drain Current2
Single Pulse Avalanche Energy3
PD@TC=25℃
Total Power Dissipation4
TSTG
Storage Temperature Range
Rating
65 ±20 15
46 33.8 3.1
-55 to 150
RθJA RθJC
Operating Junction Temperature Range...
