Datasheet4U Logo Datasheet4U.com

SSR-80DA - SSR Series SOLID STATE RELAY

Download the SSR-80DA datasheet PDF. This datasheet also covers the SSR-05DA variant, as both devices belong to the same ssr series solid state relay family and are provided as variant models within a single manufacturer datasheet.

Description

The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

  • 10.0±0.3.
  • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSR-05DA-ANV.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSR-80DA
Manufacturer ANV
File Size 1.06 MB
Description SSR Series SOLID STATE RELAY
Datasheet download datasheet SSR-80DA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSR-10DA DC to AC Solid State Relay Fotek
SSR-10DD General Solid State Relay FUZHOU CANWELL
SSR-20DD General Solid State Relay FUZHOU CANWELL
SSR-240A25 Solid State Relay TE
SSR-240A50 Solid State Relay TE

Other Datasheets by ANV

Part Number Description
SSR-80DA-H SSR Series SOLID STATE RELAY
SSR-80AA SSR Series SOLID STATE RELAY
SSR-80AA-H SSR Series SOLID STATE RELAY
SSR-80LA SSR Series SOLID STATE RELAY
SSR-80LA-H SSR Series SOLID STATE RELAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3 • Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 3.0 ± 12 35 2.0 150 3.0 37.
Published: |