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APM2104SG - Dual-Channel MOSFET

General Description

S1 1 G1 2 S2 3 G2 4 8 7 6 5 D1 D1 D2 D2 P-Channel -20V/-2.5A, RDS(ON)=85mΩ(typ.) @ VGS=-4.5V RDS(ON)=120mΩ(typ.) @ VGS=-2.5V RDS(ON)=180mΩ(typ.) @ VGS=-1.8V Top View of JSC70-8 D1 D2 Super High Dense Cell Design Reliable and Rugged Lead Free Available (Ro

Key Features

  • N-Channel 20V/3.5A, RDS(ON)=45mΩ(typ. ) @ VGS=4.5V RDS(ON)=60mΩ(typ. ) @ VGS=2.5V RDS(ON)=90mΩ(typ. ) @ VGS=1.8V Pin.

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Datasheet Details

Part number APM2104SG
Manufacturer ANPEC
File Size 254.14 KB
Description Dual-Channel MOSFET
Datasheet download datasheet APM2104SG Datasheet

Full PDF Text Transcription for APM2104SG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APM2104SG. For precise diagrams, and layout, please refer to the original PDF.

APM2104SG Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 20V/3.5A, RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V RDS(ON)=90mΩ(typ.) @ ...

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Ω(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V RDS(ON)=90mΩ(typ.) @ VGS=1.8V Pin Description S1 1 G1 2 S2 3 G2 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -20V/-2.5A, RDS(ON)=85mΩ(typ.) @ VGS=-4.5V RDS(ON)=120mΩ(typ.) @ VGS=-2.5V RDS(ON)=180mΩ(typ.) @ VGS=-1.8V Top View of JSC70-8 D1 D2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) G1 G2 Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 S2 N-Channel P-Channel Ordering and Marking Information APM2104 Lead Free Code Handling Code Temp. Range Package Code Package Code SG : JSC70-8 Oper

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