AGM312M
Description
The AGM312M bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
- Features
- Advance high cell density Trench technology
- Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching
- Low Thermal resistance
- Application
- MB/VGA Vcore
- SMPS 2nd Synchronous Rectifier
- POL application
- BLDC Motor driver
Product Summary
BVDSS 30V -30V
RDSON 10mΩ 28mΩ
SOP-8 Pin Configuration
S1 G1 S2 G2
D1 D1 D2 D2
D1
G1
S1
ID 11A -7.2A
D2 G2
S2
Package Marking and Ordering Information
Device Marking
Device
Device Package SOP-8
Reel Size 325mm
Tape width 16mm
Quantity 3000
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol VDS VGS ID
IDM (pluse)
EAS TJ,TSTG
Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V)
Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain...
