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SSC8LA0GT8 - N-Channel Enhancement Mode MOSFET

Description

excellent RDS(ON) and low gate charge.

suitable for use as a load switch or in PWM applications.

Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GT8 Absolute Max

Features

  • s VDS VGS RDSon TYP ID.

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Datasheet Details

Part number SSC8LA0GT8
Manufacturer AFSEMI
File Size 582.83 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8LA0GT8 Datasheet

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Full PDF Text Transcription

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SSC8LA0GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 100V ±20V 9mR@10V 13mR@4V5 60A  Pin Configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8LA0GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Operating and Storage Junction Temperature Range Pulsed Drain Current (Note 2) Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1) Avalanche energy L=0.
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