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SSC8K21GN3 - P-Channel Enhancement Mode MOSFET

Description

SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.

the tiny and thin outline saves PCB consumption.

Package Information KD AASG 12 3 4 SSC-1V0 Package：DFN3x2 http://www.a

Features

  • s P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 35uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF TYP 410Mv@0.5A ID -2A IO 1A.

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Datasheet Details

Part number SSC8K21GN3
Manufacturer AFSEMI
File Size 537.99 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8K21GN3 Datasheet

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Full PDF Text Transcription

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SSC8K21GN3 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 35uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF TYP 410Mv@0.5A ID -2A IO 1A  Applications  Li Battery Charging  High Side DC/DC Converter  High Side Driver for Brushless DC Motor  Power Management in Portable, Battery Powered Devices  Pin configuration Top View 8765 KKDD  General Description SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.  Package Information KD AASG 12 3 4 SSC-1V0 Package：DFN3x2 http://www.afsemi.
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