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SSC8205GSB - Dual N-Channel Enhancement Mode MOSFET

Description

Case: SOT23-6 Case Material: Molded Plastic.

Applications Li-ion battery protection ; Load swich Pin configuration Top View PIN NUMBER

Features

  • s VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current.
  • General.

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Datasheet Details

Part number SSC8205GSB
Manufacturer AFSEMI
File Size 308.14 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8205GSB Datasheet

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Full PDF Text Transcription

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SSC8205GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description Case: SOT23-6 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208  Applications  Li-ion battery protection ;  Load swich  Pin configuration Top View PIN NUMBER 1 2 3 4 5 6 SOT23-6L NAME S1 D S2 G2 D G1 FUNCTION SOURCE1 DRAIN SOURCE2 GATE2 DRAIN GATE1  Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www.
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