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SSC80A2GT1 - N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Load Switch Portable Devices DCDC conversion Pin Configuration Top View Package Information S

Features

  • s.
  • VDS VGS 100V ±20V RDSon TYP 129mR@10V 130mR@4V5 ID 5A.
  • General.

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Datasheet Details

Part number SSC80A2GT1
Manufacturer AFSEMI
File Size 157.09 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC80A2GT1 Datasheet

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Full PDF Text Transcription

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SSC80A2GT1 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 100V ±20V RDSon TYP 129mR@10V 130mR@4V5 ID 5A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information SSC-V1.0 Package :TO-92 http://www.afsemi.
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