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SSC8039GQ4 - P-Channel Enhancement Mode MOSFET

Description

technology, which is especially used to minimize on-state resistance.

Features

  • s VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A.

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Datasheet Details

Part number SSC8039GQ4
Manufacturer AFSEMI
File Size 417.13 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8039GQ4 Datasheet

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Full PDF Text Transcription

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SSC8039GQ4 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Bottom View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.
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