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SSC8037GT8
P-Channel Enhancement Mode MOSFET
Features
VDS -30V
VGS ±20V
RDSon TYP 27mR@-10V 39mR@-4V5
ID -8A
Applications
Load Switch
DCDC conversion NB battery
Pin Configuration
General Description
Top View
This device is produced with high cell density, DMOS
trench technology, which is especially used to minimize
on-state resistance. This device is particularly suited for
low voltage power management requiring a wild range
of given voltage ratings(4.5V~25V) such as load switch
and battery protection.
Package Information
SSC-1V0
Units:mm
http://www.afsemi.
SSC8037GT8 Datasheet
