ACE4908A Datasheet Dual P-Channel Enhancement Mode MOSFET

Manufacturer: ACE Technology

ACE4908A dual p-channel enhancement mode mosfet by ACE Technology - Datasheet Preview

Datasheet Details

Part number	ACE4908A
Manufacturer	ACE Technology
File Size	421.80 KB
Description	Dual P-Channel Enhancement Mode MOSFET
Download	ACE4908A Download (PDF)

General Description

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

Overview

ACE4908A Dual P-Channel Enhancement Mode MOSFET.

Key Features

P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.

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