TPM2003
Features
Description
- 7-channel Darlington Array
- 500-m A Rated Drain Current (Per Channel)
- Very Low Output Leakage < 10 n A Per Channel
- Power Efficient with Low RDS-on
- Extended Temperature Range: TA =
- 40°C to 125°C
- High-Voltage Outputs: 40 V
- patible with 1.8-V to 5.0-V Logic Interface
- Integrated Free-wheeling Diodes for Inductive Load
- Improved Noise-immunity with integrated RC filter
- Enhanced ESD Protection Exceeds JESD 22
- 2.5-k V
HBM, 1.5-k V CDM
- Available in SOP16 and TSSOP16 Packages
Applications
The TPM2003 is a high-voltage, high-current NMOS transistor array. This device consists of seven channels of low-side NMOS transistors with high-voltage outputs and free-wheeling diodes for inductive loads.
The maximum drain-current rating of a single NMOS channel is 500 m A. The device supports a wide I/O voltage range from 1.8 V to 30 V. The transistors can drive in parallel for higher current capability. Enhanced ESD performance enhances system-level reliability.
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