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A6SHB - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a battery protection or in other switching application.

Features

  • V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @ VGS=10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – A6SHB

Datasheet Details

Part number A6SHB
Manufacturer wpmtek
File Size 797.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet A6SHB Datasheet
Additional preview pages of the A6SHB datasheet.

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    WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = 30V, lD = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON) < 58mΩ @ VGS=10V ■ High power and current handing capability ■ Lead free product is acquired ■ Surface mount package Application ■ Battery protection.
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