A5SHB - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Features

V DS = -20V, lD = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

wpmtek

📥 Download Datasheet

Datasheet Details

Part number	A5SHB
Manufacturer	wpmtek
File Size	758.96 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	A5SHB Datasheet
Additional preview pages of the A5SHB datasheet.

📁 Similar Datasheet

Other Datasheets by wpmtek

Full PDF Text Transcription

Click to expand full text

WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = -20V, lD = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.

Published: Nov 10, 2024 |