QN0103M3N Datasheet (uPI Semiconductor) - N-Channel 100V Fast Switching MOSFET

QN0103M3N, N-Channel 100V Fast Switching MOSFET

The QN0103M3N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

The QN0103M3N meets RoHS and Green Product requirements while suppor

QN0103M3N Features

* Product Summary Advanced high cell density Trench technology Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available VDS 100V RDS(ON) max (VGS=10V) 16.6mΩ ID (TC=25 °C) 43A Applications Secondary Synchronous LED TV Back Light Ordering Information Order Number Package Ty