QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET

uPI Semiconductor

Description

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General .
The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate.

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Datasheet Specifications

Part number: QA3111N6N
Manufacturer: uPI Semiconductor
File Size: 516.40 KB
Datasheet: QA3111N6N-uPISemiconductor.pdf
Description: 30V Asymmetric Dual N-Channel Power MOSFET

Features

* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline

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QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET uPI Semiconductor

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