Datasheet Details
| Part number | PE4946 |
|---|---|
| Manufacturer | semi one |
| File Size | 289.34 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PE4946 Datasheet
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Description
The PE4946 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Features
- VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Low gate to drain charge to reduce switching losses.