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PE10N10 - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE10N10
Manufacturer	semi one
File Size	837.31 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE10N10-semione.pdf

PE10N10 Product details

Description

The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Dec 3, 2018 |