Datasheet Details
Part number:
UFB15C12E1BC3N
Manufacturer:
qorvo
File Size:
1.49 MB
Description:
Sic cascode jfet.
Datasheet Details
Part number:
UFB15C12E1BC3N
Manufacturer:
qorvo
File Size:
1.49 MB
Description:
Sic cascode jfet.
UFB15C12E1BC3N, SiC Cascode JFET
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, S
UFB15C12E1BC3N Features
* w On-resistance: RDS(on) = 70mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 140nC w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 46nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2
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