Description
The HMHA281 and HMHA2801 series devices consist of a gallium
arsenide infrared emitting diode driving a silicon phototransistor in a compact 4
pin mini
flat package.
Features
- Compact 4.
- Pin Package.
- 2.4 mm Maximum Standoff Height.
- Half.
- Pitch Leads for Optimum Board Space Savings.
- Current Transfer Ratio:.
- HMHA281: 50% to 600%.
- HMHA2801: 80% to 600%.
- HMHA2801A: 80% to 160%.
- HMHA2801B: 50% to 150%.
- HMHA2801C: 50% to 100%.
- Safety and Regulatory Approvals:.
- UL1577, 3.750 VACRMS for 1 Minute.
- DIN.
- EN/IEC60747.
- 5.
- 5, 565 V Peak Wor.
HMHA281-onsemi.pdf
