Datasheet4U Logo Datasheet4U.com

PUSB3FR6 - ESD protection

Description

The device is designed to protect high-speed interfaces such as SuperSpeed and Hi-Speed USB combination, SD-memory card 3.0 and thunderbolt interfaces against ElectroStatic Discharge (ESD).

The device includes six high-level ESD protection diode structures for ultra high-speed signal lines.

Features

  • System-level ESD protection for USB 2.0 and USB 3.2 combination, SD-memory card and thunderbolt interfaces.
  • Supports SuperSpeed USB 3.2 at 10 Gbps.
  • All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±15 kV exceeding IEC 61000-4-2, level 4.
  • Matched 0.5 mm trace spacing.
  • Line capacitance of only 0.35 pF for each channel.
  • Design-friendly ‘pass-through’ signal routing 3.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PUSB3FR6 ESD protection for ultra high-speed interfaces 11 October 2018 Product data sheet 1. General description The device is designed to protect high-speed interfaces such as SuperSpeed and Hi-Speed USB combination, SD-memory card 3.0 and thunderbolt interfaces against ElectroStatic Discharge (ESD). The device includes six high-level ESD protection diode structures for ultra high-speed signal lines. The device is encapsulated in a leadless ultra small DFN2111-7 (SOT1358-1) Surface-Mounted Device (SMD) plastic package. All signal lines are protected by a special diode structure offering ultra low line capacitance of only 0.35 pF.
Published: |