Datasheet4U Logo Datasheet4U.com

PSMN2R8-40YSD - N-channel MOSFET

Description

3.

Table 3.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN2R8-40YSD 4 June 2019 Preliminary data sheet 1. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 12; Fig. 13 Min Typ Max Unit - - 40 V [1] - - 120 A - - 147 W -55 - 175 °C - 2.4 2.7 mΩ - 7 14 nC - 44 62 nC [1] 120A Continuous current has been successfully demonstrated during application tests.
Published: |